DR flat panel detector - indirect flat panel detection techn

Indirect flat panel detection
The structure of the indirect energy conversion flat panel detector is composed of a scintillator or phosphor layer coated with an amorphous silicon layer functioning as a photodiode and an array of TFTs.
Iodine iodide---amorphous silicon flat panel detector structure

Indirect flat panel detection technology uses a fluorescent substance (germanium iodide) to convert X-rays into visible light, which is converted into an image charge signal by a photoelectric acquisition circuit.

1. fluorescent material layer
More use of Csl scintillator. It usually consists of a substance with a high atomic number and has a high absorption capacity for X-rays.
The combination of Csl and amorphous silicon is the material with the highest DQE (quantum measurement efficiency) value.

2. Probe array layer
The incident X-ray scintillation crystal layer is converted into visible light and then converted into an electrical signal by the photodiode matrix. X-rays produce scattering, which results in a larger image quality.

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