Factors affecting the spatial resolution of flat panel detectors
In amorphous silicon flat panel detectors, there is scattering due to the generation of visible light. The spatial resolution depends not only on the size of the thin film transistor matrix per unit area, but also on the control technique of the scattered light. In general, the spatial resolution of indirect conversion flat panel detectors is not as high as the spatial resolution of direct conversion flat panel detectors.
In an amorphous selenium flat panel detector, since no visible light is generated, no scattering occurs, and the spatial resolution depends on the size of the thin film transistor matrix per unit area. The larger the matrix, the larger the number of thin film transistors, the higher the spatial resolution, and the higher spatial resolution can be achieved with the improvement of the process.
The relationship between quantum detection efficiency and spatial resolution For the same flat panel detector, the DQE is variable at different spatial resolutions; the extreme DQE is high, not equal to the high DQE at any spatial resolution.
The formula for DQE is as follows:
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